Changxin Storage plans to enter the NAND flash memory market

According to Reuters, citing informed sources, Changxin Storage (CXMT) is preparing to enter the NAND flash memory chip market, expanding beyond its core DRAM business and competing with Samsung Electronics, SK Hynix, Micron, and Yangtze Memory Technologies.

Changxin Storage plans to establish a NAND flash research and production line at its new factory in Beijing and set up a research institute in Beijing that includes NAND development projects. The company has discussed related plans with clients, including a startup that intends to procure chips for AI systems and supercomputers. The timeline for the operation of the R&D line or large-scale commercial manufacturing remains unclear.

The global storage shortage is driven by demand for AI servers and is expected to last at least until 2027. Manufacturers prioritize DRAM and HBM spending, limiting the increase in NAND capacity. Changxin Storage raised 57.92 billion yuan in its IPO in July. Yangtze Memory Technologies was placed on the entity list in 2022.