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storage

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Flash

first_img The shortage of storage chips impacts the smartphone market, with shipments in the third quarter hitting a 14-year low for the same period

Financial Associated Press reported on October 12, citing market research firm Counterpoint Research, that the ongoing construction of artificial intelligence infrastructure continues to squeeze the supply of storage chips, putting pressure on costs and supply in consumer electronics. Preliminary data shows that global smartphone shipments in the third quarter of 2026 are expected to decline by 20% year-on-year, reaching the lowest level for the same period since 2012. The storage chip crisis has impacted the smartphone market for the second consecutive quarter, with rising chip costs increasing the overall bill of materials, leading manufacturers to raise retail prices. Since 2026, global smartphone retail prices have cumulatively increased by about 20%.Samsung remains the global leader, with its market share rising to 23% in the third quarter, although shipments declined by 3% year-on-year, marking the largest share increase among major manufacturers. Apple's share rose to 22%, marking its first time surpassing 20% in the third quarter, but shipments declined year-on-year. The absence of the base model iPhone 18 this year resulted in a lower channel distribution scale in the first month of new product launches compared to the previous year's iPhone 17 series. The iPhone 18 Pro series performed better than its predecessor in China and India.Xiaomi's shipments in the third quarter declined by over 30% year-on-year, with its market share dropping to 10%. Both OPPO and vivo saw their shipments decline by over 20% year-on-year, with shares falling to 9% and 8%, respectively. Counterpoint senior analyst Shilpi Jain stated that consumers are holding onto their existing devices for longer and are considering more refurbished devices. Counterpoint indicated that global smartphone shipments are unlikely to see a significant recovery before improvements in storage chip costs and supply.

first_img Samsung Electronics plans three models of zNAND, aimed at customized AI storage

According to a report by ZDNet Korea on October 12, Samsung Electronics is expanding the application range of the next-generation NAND flash memory zNAND and plans to subdivide the products into three types: zNAND-O, zNAND-T, and zNAND-I, in addition to the publicly announced zNAND-O. The report states that Samsung Electronics has not officially announced the latter two products, but the industry has learned that related plans have entered the early development stage to address the increasing demand for customized storage in AI infrastructure.zNAND-O is aimed at edge AI. Unlike traditional wire bonding, this solution vertically stacks NAND in 4 or 8 layers through silicon vias, shortening the data transmission path and enhancing speed and energy efficiency. Samsung Electronics first publicly showcased the zNAND-O model at a memory-related event in the United States in August this year.zNAND-T focuses on throughput and is aimed at high-capacity, high-performance AI data centers, also expanding bandwidth through vertical stacking and silicon vias, and is referred to by the industry as high-bandwidth flash memory. zNAND-I focuses on increasing input/output operations per second, used for frequent processing of small-capacity temporary data such as key-value caches in AI inference. The report also mentions that SK Hynix is developing AI NAND product series such as AIN P, AIN D, and AIN B.

first_img Central Daily News: Former CEO of Changxin Storage accused of pressuring for Samsung technology

According to a report by South Korea's "JoongAng Ilbo," a statement obtained from a former head of equipment investment at Changxin Memory Technologies (CXMT), who has a background at Samsung Electronics, reveals that the former CEO of CXMT, Wang Ningguo, summoned the Korean team, including the individual in question, from October to December 2016. He demanded they bring back Samsung Electronics' Process Recipe Plan (PRP) and equipment information, threatening to report them to the South Korean government if they failed to do so, and warned them to verify their connections and not to lie. The individual stated that they felt scared at the time. The report mentioned that CXMT's management referred to Samsung Electronics as "Huangshan."After working at Samsung Electronics for 28 years, the individual joined CXMT and was prosecuted for allegedly leaking and using Samsung's 1.6 trillion won investment in the world’s first 18-nanometer DRAM process without authorization. In April of this year, they were sentenced to seven years in prison in the first trial and are currently in the second trial. The PRP includes the sequence of about 600 steps in DRAM manufacturing, equipment, condition values, and the companies and models of the equipment. Park, a former process design engineer at Samsung, hand-copied the relevant content into a 12-page notebook in September 2016 and brought it out, and is currently under an Interpol Red Notice.During the court hearing, the individual stated that there was a claim made during communications with the Chinese side that investment would not be provided to CXMT if they could not produce the 18-nanometer process. They later learned that the other party had wanted the technology from the very beginning, and CXMT initially had no plans to develop it independently. The pressure mentioned occurred before a meeting to prepare for the investment application. CXMT was established in 2016 with an investment of 14.4 billion yuan from Hefei Industrial Investment, a subsidiary of the Hefei municipal government, and had not been profitable for about 10 years, achieving its first annual profit last year with a net profit of 7.1 billion yuan.

first_img Samsung Electronics accelerates the construction of the first mass production line in Pyeongtaek P5, with the equipment introduction target moved up to the second quarter of next year

According to a report by ZDNet Korea on September 28, Samsung Electronics is accelerating the construction of the first mass production line (Ph1) at the Pyeongtaek Fifth Campus (P5) and is discussing with major equipment manufacturers to move the target for Ph1 equipment installation from the originally planned third quarter of next year to the second quarter of next year. P5 is the next-generation semiconductor production base aimed to be operational by 2028, and the construction of the Ph1 cleanroom began in the third quarter of this year.Samsung Electronics had previously advanced the completion of the P5 Ph1 cleanroom, originally scheduled for early next year, by about six months, so the equipment installation is expected around the third quarter of next year. Industry insiders say that the start time for equipment installation is planned to be moved up from July to August next year to around May to June next year; others have indicated that Samsung has even proposed to deliver equipment in the first quarter of next year for temporary storage at other locations, showing a strong willingness to invest early.Discussions on the investment for the second phase of P5 (Ph2) are also progressing. Currently, Ph1 is more likely to be built as a DRAM and HBM production line, while Ph2 is more likely to be built as an advanced NAND production line, including the tenth generation (V10). Equipment industry insiders say that formal purchase orders have not yet been placed, but Samsung has discussed building Ph2 as a NAND production line with partners, and due to the long equipment delivery cycle, they are requesting to prepare relevant components in advance. Reports indicate that large global tech companies are increasing orders for high-performance DRAM and NAND for AI infrastructure, while storage companies like Samsung have limited production capacity. Samsung stated during the second quarter earnings call in July that unmet demand this year will extend into next year, and the supply shortage next year will be more severe than this year, with shortages expected to continue until 2028.
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