Winbond Electronics has initiated the expansion of its Kaohsiung Luzhu plant, with Module B expected to start construction in 2027

According to the Industrial and Commercial Times, driven by the long-term growth in demand for memory and advanced packaging due to AI, Winbond Electronics has proactively initiated expansion plans for its Kaohsiung Luzhu plant, merging the originally planned phases two and three into Module B for simultaneous development. Construction of the cleanroom is expected to start in 2027, with equipment installation beginning as early as the beginning of 2029, and equipment will be phased in according to customer demand forecasts and LTA. Currently, there are already customers negotiating for capacity in 2029 and 2030.

Industry sources indicate that Winbond's niche DRAM and SLC NAND are in short supply in the third quarter, with a quarterly price increase estimated at about 50%; NOR Flash benefits from large cloud service provider customers stocking up, with a quarterly price increase estimated at about 30%. The price increase for memory in the fourth quarter is expected to converge to 2% to 5%, but thanks to increased DRAM capacity and growing shipment volumes, revenue and profits can still maintain a quarterly increase. Winbond's consolidated revenue in the second quarter was NT$59.843 billion, a quarterly increase of 56.4% and a year-on-year increase of 184.7%. DRAM prices increased by about 100% quarter-on-quarter, while Flash rose by about 43%, with consolidated gross margin rising to 66.2% and after-tax earnings per share of NT$5.40.

The Module B product plan includes Standard DRAM, CUBE DRAM, Wafer-on-Wafer (WoW), and silicon capacitors (Si-Cap), which will support 14-nanometer and future 12-nanometer DRAM processes, with plans to introduce EUV equipment in the future.