Changxin Storage's DRAM monthly production capacity will reach 350,000 wafers by the end of the year, approaching Micron

According to TechPowerUp, Chinese DRAM manufacturer Changxin Storage (CXMT) expects to reach a monthly production capacity of approximately 350,000 DRAM wafers by the end of 2026, while Micron estimates around 375,000 wafers during the same period. The cleanroom construction cycle for Changxin Storage is about 12 months, shorter than the industry norm of 21 to 24 months.

Due to U.S. sanctions preventing access to EUV, Changxin Storage is using older DUV lithography and multi-patterning technology. The company has begun shipping 16 Gb DDR5 chips at a speed of 8000 MT/s, with a chip area of 67 mm² and a density of 0.239 Gb/mm², where the G4 unit is 20% smaller than the G3. The 24 Gb modules are being mass-produced at approximately 6000 MT/s, and LPDDR5X-10667 modules (12 Gb and 16 Gb) have also entered mass production. The Chinese government is encouraging Changxin Storage to transfer DRAM IP to domestic manufacturers such as JHICC, Swaysure, and Yangtze Memory Technologies (XMC).