Analysis: 1b DRAM unit area value exceeds TSMC 2 nanometers

Semiconductor analysis firm Kernel Insight: Demand for artificial intelligence drives DRAM prices to maintain historical highs, with the unit area sales value of the latest process DRAM exceeding the wafer prices of TSMC's N2 and N3. The firm estimates TSMC's 300mm N3 wafer price at $20,000 and N2 at $30,000, translating to nominal prices of approximately $0.283 per square millimeter and $0.424 per square millimeter, respectively, not accounting for edge losses, cutting losses, yield, and defects.

Based on a price of $1.50 per Gb and generational bit density calculations, 1y DRAM is $0.329 per square millimeter, 1z is $0.410 per square millimeter, and 1b is $0.654 per square millimeter, more than 50% higher than N2. The 10nm process gradually shrinks in the order of 1y, 1z, 1a, and 1b. The above prices per Gb assume they are close to spot prices; DRAMeXchange data shows that on September 21, the average transaction price for 16Gb DDR5 eTT chips was $24.80, approximately $1.55 per Gb.

There are differences in comparison metrics. TSMC's figures represent the wafer foundry prices paid by customers, while the DRAM figures represent the total sales potential of finished products and do not include advanced packaging costs; TSMC's actual supply prices will vary with order volumes and contracts. DRAM metrics are based on small spot prices, differing from the long-term contract prices of Samsung Electronics, SK Hynix, and Micron's revenue entities. Recently, non-public fixed trading prices have strengthened; if they have not yet fully reflected in spot prices, the leading margin of wafer unit prices for memory manufacturers may be even greater.