SK Hynix stated that 3D DRAM development can utilize foundry processes
SK Hynix stated on the 9th that the development of the next-generation memory 3D DRAM semiconductor can utilize foundry processes. The day before, at the 2026 SK Hynix Future Forum held at the Supex Center in the Icheon campus, Vice President Kim Kyung-hoon and Son Ho-young presented the main technical directions for 3D DRAM, including the use of logic foundry processes for DRAM peripheral circuits, maximizing data bus bandwidth, and ultra-short distance transmission.
3D DRAM is the next-generation DRAM that vertically stacks the originally planar storage cells to improve integration. The two stated that achieving this technology requires addressing not only design and heat dissipation issues but also challenges in fine interconnections, bonding, and process integration in the packaging field. As the boundaries between front-end and back-end packaging, foundry, and memory technology converge, collaborative optimization beyond existing fields will become more important. Son Ho-young mentioned that 3D technology is changing the technological boundaries between wafer fabs and packaging, and it is necessary to establish an optimization and new collaboration system that transcends existing fields alongside innovations in advanced packaging technology.
In a related presentation, Professor Shin Chang-hwan from Korea University stated that 3D DRAM is not only about the vertical stacking of chips but also a technology that breaks the boundaries between memory and logic. As device miniaturization approaches its limits and the time and power consumption associated with data movement between systems and memory increases, the shift to 3D technology is inevitable. He proposed a 3D integrated design framework that links materials, devices, packaging, and architecture through artificial intelligence. SK Hynix President Kwon Oh-joon, in his speech, remarked that the past memory market resembled a straight road where the competition was about who could run faster, but now it resembles a constantly changing curve, making it important to grasp the speed and direction of external environmental changes and adapt flexibly in addition to internal capabilities.






