Changxin Storage HBM3 trial production yield stagnates at 25%
According to the Chosun Ilbo, China's largest DRAM manufacturer Changxin Memory Technologies (CXMT) has launched trial production of the fourth-generation high bandwidth memory HBM3, with initial yield stagnating at 25%, about one-third of the golden mass production yield of 80%. SK Hynix has been mass producing similar products since 2022, with a yield exceeding 90%.The front-end yield of Changxin Memory's HBM3 8-layer stacked products is about 30%, while the back-end yield is approximately 70%, resulting in final good products. The company supplies a small number of samples to Chinese companies such as Alibaba's Pingtouge and Cambricon, and continues to improve yields. Its G4 (17-nanometer) process ordinary DRAM has no major issues, but the DRAM chips used for HBM have larger areas and stricter electrical specifications.The industry attributes the reasons to the insufficient maturity of Through-Silicon Via (TSV) technology. Nomad Semi's analysis shows that Samsung's HBM2 has over 5,000 TSVs per chip, SK Hynix's HBM3 has over 8,000, while Changxin Memory has about 3,000. There is a gap of 4 to 5 years compared to Samsung and SK Hynix.