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first_img Samsung Electronics accelerates the advancement of the second phase of the Mattel wafer factory, requiring equipment suppliers to obtain SEMI certification in advance

According to ZDNet Korea, Samsung Electronics is accelerating the expansion of its advanced wafer foundry capacity in the United States. The company plans to start the second phase of construction at the Taylor wafer plant in Texas by the end of this year, aiming for mass production by 2030, and has requested major equipment partners to obtain SEMI certification in advance for subsequent equipment import and export. SEMI certification is a standard for assessing the safety of semiconductor equipment and is usually a necessary procedure before equipment leaves the country.The Taylor wafer plant is responsible for Samsung's most advanced foundry mass production tasks. The first phase is currently undergoing equipment entry and installation, with a target to start production by the end of this year, focusing on a 2-nanometer mass production process, with Tesla seen as a core customer. Samsung stated in last month's second-quarter earnings call that to respond promptly to the growing customer demand, the second phase of Taylor will commence by the end of this year. Industry insiders say that although the specific specifications for the second phase have not yet been finalized, Samsung's foundry business has already pushed forward relevant preparations in advance.Previously, Samsung had postponed the investment in the first phase of Taylor multiple times due to insufficient customers and a sluggish market, until Tesla signed a foundry agreement worth approximately 22.76 trillion won in the third quarter of last year, which accelerated construction. The actual pace of mass production in the second phase will still depend on the expansion of supply to Tesla and the progress of new major customers. Additionally, there are reports that Samsung E&A is considering dispatching dozens of construction personnel locally.

first_img Samsung Electronics advances the expansion of the P5 factory in Pyeongtaek into a three-story wafer plant

According to the Dong-A Ilbo, Samsung Electronics plans to expand the core project of the P5 1·2 factory (Fab 5·6) in Pyeongtaek, Gyeonggi Province, from a dual-layer wafer factory to a three-layer wafer factory to respond to the global artificial intelligence semiconductor and memory supercycle and maximize production capacity. Samsung Electronics has recently submitted a plan to change the industrial park, proposing to increase the floor area ratio from 350% to a maximum of 490%. This change must be reviewed by the Gyeonggi Province governor and approved by the Ministry of Land, Infrastructure and Transport's industrial site policy review committee before it can be finalized.The Pyeongtaek P5 1·2 factory is the largest semiconductor factory in the world under a single standard, which began construction in 2022 and aims to be completed by 2030. It will produce high bandwidth memory (HBM), high-end DRAM, next-generation V-NAND, and advanced foundry products. The currently operational Pyeongtaek P4 uses a dual-layer structure with four clean rooms in a single building; if the change is approved, P5 will be configured with up to six clean rooms, and the number of clean rooms and production capacity is expected to increase by about 1.5 times. SK Hynix also plans to use a three-layer structure for all newly constructed wafer factories in the Yongin semiconductor cluster.Market research firm Counterpoint Research expects the global memory market size to increase from approximately 360 trillion won last year to 1,500 trillion won this year and 2,100 trillion won next year. In the context of increasingly difficult access to electricity, water, and land, increasing the floor area ratio to build three-layer wafer factories has become an important path to overcome the physical limitations of limited space and rely on the existing semiconductor industry ecosystem.

hot_img TSMC's CoWoS orders are overflowing, and it is reported that Intel's Malaysia factory will support backend packaging

According to the Economic Daily, TSMC's advanced packaging CoWoS capacity is in short supply, and it has been reported that some backend orders have overflowed to Intel's factory in Malaysia, where Intel is assisting with packaging using part of its capacity to serve common major customers, breaking the past ecosystem competition norms. TSMC Chairman Wei Zhejia previously stated at a conference call that TSMC focuses on advanced packaging in the frontend and welcomes "more manufacturers to supply capacity" for the shortage in the backend, providing flexible alternatives for common customers.The report points out that the bottleneck in advanced packaging capacity mainly lies in the backend ramp-up speed being lower than that of the frontend process, and the widening gap in CoWoS capacity has forced orders to overflow. SemiAnalysis Chipbook data shows that approximately $1.3 billion worth of HBM has been shipped to Malaysia, and industry analysis indicates that Intel's local factory should already have the capability for large-scale HBM integration. Intel CEO Pat Gelsinger stated that the EMIB-T technology is ensuring reliable yield, and in the context of insufficient CoWoS capacity, "Intel is in a unique position to provide support." Companies with overlapping supply chains such as Unimicron, ASE Technology Holding, and Jiadeng are expected to benefit simultaneously, with Unimicron's stock price rising over 7% on that day. Intel's EMIB-T related applications are targeted for mass production by 2027.

hot_img SK Hynix will expand its NAND production capacity in Dalian by about 50%, with the second factory in Dalian expected to start production in the first half of next year

SK Hynix has restarted the construction of its second NAND flash memory factory in Dalian, expecting to increase the monthly production capacity in the region by about 50%. The new production line is designed for a monthly capacity of approximately 50,000 wafers, combined with the existing Dalian Plant 1's monthly capacity of 100,000 wafers, bringing SK Hynix's total NAND production capacity in China to about 150,000 wafers per month. The factory began construction four years ago but was paused due to the downturn in the memory chip market and U.S. export restrictions on equipment to China, having only completed the structural framework.The investment in Dalian Plant 2 is driven by SK Hynix's NAND subsidiary Solidigm, with equipment installation expected to start as early as November this year, and plans to establish a mass production system in the first half of next year. Driven by the expansion of AI data centers, demand for enterprise-level SSDs has surged, with NAND prices rising nearly tenfold compared to a year ago, prompting the restart of investments. SK Hynix will adopt a dual-track strategy: the Dalian factory will use Intel's mature floating gate architecture to produce NAND at the hundred-layer level, while domestic factories like Cheongju M17 will focus on advanced NAND production of over 300 layers, the latter having announced an investment of 19.1 trillion won. Industry insiders expect that the equipment configuration of Dalian Plant 2 will be similar to that of Plant 1, maintaining a monthly production capacity in the range of 40,000 to 60,000 wafers.

Changxin Memory is considering building a second DRAM wafer factory in Beijing and is in talks for financing support

According to Reuters, informed sources say that Changxin Storage is considering building a second 12-inch DRAM wafer fab in Beijing's Yizhuang and is negotiating financing with the Beijing Economic and Technological Development Zone and several state-owned technology companies. The company is seeking at least 60 million yuan (approximately 8.9 million USD) in support, but negotiations are still in the early stages, and the scale and structure of the financing may be adjusted.The proposed factory will be located at the site of Changxin Storage's existing DRAM wafer fab in Beijing. The planned production capacity and total investment for the project have not yet been determined, while building a fab capable of producing advanced DRAM typically requires over 10 billion USD. Currently, Changxin Storage operates two 12-inch DRAM wafer fabs in Hefei and one in Beijing, each with a monthly production capacity of about 100,000 wafers. Changxin Storage is also building new factories in Shanghai and Hefei, and once the related projects are fully operational, the company's monthly production capacity could double to over 600,000 wafers.This expansion comes as demand for storage chips is driven by AI infrastructure, data centers, and consumer electronics entering an upward cycle. The company completed an 8.6 billion USD IPO last month, marking the largest fundraising for a semiconductor company listed in mainland China, and its stock price has risen by 13% since going public. Changxin Storage is currently the fourth largest DRAM manufacturer in the world, but Samsung Electronics, SK Hynix, and Micron together still account for nearly 90% of the global market share in the first quarter. Beijing and Shanghai are also providing funding and other support to Changxin Storage to gain economic and strategic benefits from its expansion.
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